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A photo-elastic microscopy study of the temperature dependecy of stress induced by through silicon vias in silicon

dc.contributor.authorHerms, Martin
dc.contributor.authorWagner, Matthias
dc.contributor.authorDe Messemaeker, Joke
dc.contributor.authorDe Wolf, Ingrid
dc.date.accessioned2021-10-24T05:37:48Z
dc.date.available2021-10-24T05:37:48Z
dc.date.issued2017
dc.identifier.issn1610-1634
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28490
dc.sourceIIOimport
dc.titleA photo-elastic microscopy study of the temperature dependecy of stress induced by through silicon vias in silicon
dc.typeJournal article
dc.contributor.imecauthorDe Messemaeker, Joke
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.orcidimecDe Wolf, Ingrid::0000-0003-3822-5953
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1700028
dc.source.journalPhysica Status Solidi C
dc.source.issue7
dc.source.volume14
dc.identifier.urlhttp://onlinelibrary.wiley.com/doi/10.1002/pssc.201700028/full
imec.availabilityPublished - open access
imec.internalnotespaper at: Gettering and Defect Engineering in Semiconductor Technology XVII, Lopota, Georgia


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