dc.contributor.author | Hikavyy, Andriy | |
dc.contributor.author | Zyulkov, Ivan | |
dc.contributor.author | Mertens, Hans | |
dc.contributor.author | Witters, Liesbeth | |
dc.contributor.author | Loo, Roger | |
dc.contributor.author | Horiguchi, Naoto | |
dc.date.accessioned | 2021-10-24T05:47:08Z | |
dc.date.available | 2021-10-24T05:47:08Z | |
dc.date.issued | 2017 | |
dc.identifier.issn | 1369-8001 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/28515 | |
dc.source | IIOimport | |
dc.title | Use of high order precursors for manufacturing Gate all around devices | |
dc.type | Journal article | |
dc.contributor.imecauthor | Hikavyy, Andriy | |
dc.contributor.imecauthor | Zyulkov, Ivan | |
dc.contributor.imecauthor | Mertens, Hans | |
dc.contributor.imecauthor | Witters, Liesbeth | |
dc.contributor.imecauthor | Loo, Roger | |
dc.contributor.imecauthor | Horiguchi, Naoto | |
dc.contributor.orcidimec | Hikavyy, Andriy::0000-0002-8201-075X | |
dc.contributor.orcidimec | Loo, Roger::0000-0003-3513-6058 | |
dc.contributor.orcidimec | Horiguchi, Naoto::0000-0001-5490-0416 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 24 | |
dc.source.endpage | 29 | |
dc.source.journal | Materials Science in Semiconductor Processing | |
dc.source.volume | 70 | |
dc.identifier.url | http://www.sciencedirect.com/science/article/pii/S136980011630484X | |
imec.availability | Published - open access | |