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Role of transport band edge variation on delocalized charge transport in high-mobility crystalline organic semiconductors

dc.contributor.authorKadashchuk, Andriy
dc.contributor.authorTong, Fei
dc.contributor.authorJanneck, Robby
dc.contributor.authorFishchuk, Ivan
dc.contributor.authorMityashin, Alexander
dc.contributor.authorPavlica, Egon
dc.contributor.authorKöhler, Anna
dc.contributor.authorHeremans, Paul
dc.contributor.authorRolin, Cedric
dc.contributor.authorBratina, Gvido
dc.contributor.authorGenoe, Jan
dc.date.accessioned2021-10-24T06:29:56Z
dc.date.available2021-10-24T06:29:56Z
dc.date.issued2017
dc.identifier.issn1098-0121
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28621
dc.sourceIIOimport
dc.titleRole of transport band edge variation on delocalized charge transport in high-mobility crystalline organic semiconductors
dc.typeJournal article
dc.contributor.imecauthorKadashchuk, Andriy
dc.contributor.imecauthorHeremans, Paul
dc.contributor.imecauthorRolin, Cedric
dc.contributor.imecauthorGenoe, Jan
dc.contributor.orcidimecHeremans, Paul::0000-0003-2151-1718
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.source.peerreviewyes
dc.source.beginpage125202
dc.source.journalPhysical Review B
dc.source.issue12
dc.source.volume96
dc.identifier.urlhttps://journals.aps.org/prb/abstract/10.1103/PhysRevB.96.125202
imec.availabilityPublished - imec


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