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Improving MOCVD MoS2 electrical performance: reducing ambient exposure

dc.contributor.authorLeonhardt, Alessandra
dc.contributor.authorChiappe, Daniele
dc.contributor.authorAsselberghs, Inge
dc.contributor.authorHuyghebaert, Cedric
dc.contributor.authorRadu, Iuliana
dc.contributor.authorDe Gendt, Stefan
dc.date.accessioned2021-10-24T07:40:34Z
dc.date.available2021-10-24T07:40:34Z
dc.date.issued2017
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28783
dc.sourceIIOimport
dc.titleImproving MOCVD MoS2 electrical performance: reducing ambient exposure
dc.typeJournal article
dc.contributor.imecauthorLeonhardt, Alessandra
dc.contributor.imecauthorAsselberghs, Inge
dc.contributor.imecauthorHuyghebaert, Cedric
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecHuyghebaert, Cedric::0000-0001-6043-7130
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1606
dc.source.endpage1609
dc.source.journalIEEE Electron Device Letters
dc.source.issue11
dc.source.volume38
dc.identifier.urlhttp://ieeexplore.ieee.org/document/8037993/
imec.availabilityPublished - open access


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