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Interface charge trapping induced flatBand voltage shift during plasma-enhanced atomic layer deposition in through silicon via

dc.contributor.authorLi, Yunlong
dc.contributor.authorSuhard, Samuel
dc.contributor.authorVan Huylenbroeck, Stefaan
dc.contributor.authorMeersschaut, Johan
dc.contributor.authorVan Besien, Els
dc.contributor.authorStucchi, Michele
dc.contributor.authorCroes, Kristof
dc.contributor.authorBeyer, Gerald
dc.contributor.authorBeyne, Eric
dc.date.accessioned2021-10-24T07:53:44Z
dc.date.available2021-10-24T07:53:44Z
dc.date.issued2017
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28812
dc.sourceIIOimport
dc.titleInterface charge trapping induced flatBand voltage shift during plasma-enhanced atomic layer deposition in through silicon via
dc.typeJournal article
dc.contributor.imecauthorLi, Yunlong
dc.contributor.imecauthorSuhard, Samuel
dc.contributor.imecauthorVan Huylenbroeck, Stefaan
dc.contributor.imecauthorMeersschaut, Johan
dc.contributor.imecauthorVan Besien, Els
dc.contributor.imecauthorStucchi, Michele
dc.contributor.imecauthorCroes, Kristof
dc.contributor.imecauthorBeyer, Gerald
dc.contributor.imecauthorBeyne, Eric
dc.contributor.orcidimecLi, Yunlong::0000-0003-4791-4013
dc.contributor.orcidimecVan Huylenbroeck, Stefaan::0000-0001-9978-3575
dc.contributor.orcidimecMeersschaut, Johan::0000-0003-2467-1784
dc.contributor.orcidimecVan Besien, Els::0000-0002-5174-2229
dc.contributor.orcidimecCroes, Kristof::0000-0002-3955-0638
dc.contributor.orcidimecBeyne, Eric::0000-0002-3096-050X
dc.source.peerreviewyes
dc.source.beginpage245302
dc.source.journalJournal of Applied Physics
dc.source.issue24
dc.source.volume122
dc.identifier.urlhttp://aip.scitation.org/doi/10.1063/1.5001026
imec.availabilityPublished - imec


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