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Impact of layer alignment on the behavior of MoS 2- ZrS 2 tunnel field-effect transistors: an ab initio study

dc.contributor.authorLu, Augustin
dc.contributor.authorHoussa, Michel
dc.contributor.authorLuisier, Mathieu
dc.contributor.authorPourtois, Geoffrey
dc.date.accessioned2021-10-24T08:18:51Z
dc.date.available2021-10-24T08:18:51Z
dc.date.issued2017
dc.identifier.issn2331-7019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28863
dc.sourceIIOimport
dc.titleImpact of layer alignment on the behavior of MoS 2- ZrS 2 tunnel field-effect transistors: an ab initio study
dc.typeJournal article
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.source.peerreviewyes
dc.source.beginpage34017
dc.source.journalPhysical Review Applied
dc.source.issue3
dc.source.volume8
dc.identifier.urlhttps://doi.org/10.1103/PhysRevApplied.8.034017
imec.availabilityPublished - imec


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