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On the electrostatic control achieved in transistors based on multilayered MoS2: a first-principles study

dc.contributor.authorLu, Augustin
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorLuisier, Mathieu
dc.contributor.authorRadu, Iuliana
dc.contributor.authorHoussa, Michel
dc.date.accessioned2021-10-24T08:19:47Z
dc.date.available2021-10-24T08:19:47Z
dc.date.issued2017-01
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28865
dc.sourceIIOimport
dc.titleOn the electrostatic control achieved in transistors based on multilayered MoS2: a first-principles study
dc.typeJournal article
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.imecauthorHoussa, Michel
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage44505
dc.source.journalJournal of Applied Physics
dc.source.issue4
dc.source.volume121
dc.identifier.urlhttp://aip.scitation.org/doi/10.1063/1.4974960
imec.availabilityPublished - imec


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