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Gating of InAs/GaSb quantum wells using a silicon monoxide gate insulator

dc.contributor.authorRahman, F.
dc.contributor.authorGallagher, B.
dc.contributor.authorBehet, Markus
dc.contributor.authorDe Boeck, Jo
dc.date.accessioned2021-10-01T08:45:22Z
dc.date.available2021-10-01T08:45:22Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2891
dc.sourceIIOimport
dc.titleGating of InAs/GaSb quantum wells using a silicon monoxide gate insulator
dc.typeJournal article
dc.contributor.imecauthorDe Boeck, Jo
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage88
dc.source.endpage90
dc.source.journalApplied Physics Letters
dc.source.issue1
dc.source.volume73
imec.availabilityPublished - open access


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