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Analysis of current mirror circuits designed with line tunnel FET devices at different temperatures

dc.contributor.authorMartino, Marcio D.V.
dc.contributor.authorMartino, Joao A.
dc.contributor.authorAgopian, Paula G.D.
dc.contributor.authorVandooren, Anne
dc.contributor.authorRooyackers, Rita
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-24T08:55:08Z
dc.date.available2021-10-24T08:55:08Z
dc.date.issued2017
dc.identifier.issn0268-1242
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28937
dc.sourceIIOimport
dc.titleAnalysis of current mirror circuits designed with line tunnel FET devices at different temperatures
dc.typeJournal article
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage55015
dc.source.journalSemiconductor Science and Technology
dc.source.issue5
dc.source.volume32
dc.identifier.urlhttp://iopscience.iop.org/article/10.1088/1361-6641/aa6764
imec.availabilityPublished - imec


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