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Characteristics improvement of top-gate self-aligned amorphous indium gallium zinc oxide thin-film transistors using a dual-gate control

dc.contributor.authorNag, Manoj
dc.contributor.authorDe Roose, Florian
dc.contributor.authorMyny, Kris
dc.contributor.authorSteudel, Soeren
dc.contributor.authorGenoe, Jan
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHeremans, Paul
dc.date.accessioned2021-10-24T09:56:21Z
dc.date.available2021-10-24T09:56:21Z
dc.date.issued2017
dc.identifier.issn1071-0922
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29056
dc.sourceIIOimport
dc.titleCharacteristics improvement of top-gate self-aligned amorphous indium gallium zinc oxide thin-film transistors using a dual-gate control
dc.typeJournal article
dc.contributor.imecauthorNag, Manoj
dc.contributor.imecauthorDe Roose, Florian
dc.contributor.imecauthorMyny, Kris
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorHeremans, Paul
dc.contributor.orcidimecDe Roose, Florian::0000-0003-4490-5007
dc.contributor.orcidimecMyny, Kris::0000-0002-5230-495X
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecHeremans, Paul::0000-0003-2151-1718
dc.source.peerreviewyes
dc.source.beginpage349
dc.source.endpage355
dc.source.journalJournal of the Society for Information Display
dc.source.issue6
dc.source.volume25
dc.identifier.urlhttp://onlinelibrary.wiley.com/doi/10.1002/jsid.558/abstract
imec.availabilityPublished - imec


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