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Time dependence of quantum well recombination luminescence in a bipolar AlAs/GaAs resonant tunnelling structure

dc.contributor.authorRomandic, Igor
dc.contributor.authorBouwen, A.
dc.contributor.authorGoovaerts, E.
dc.contributor.authorVan Hoof, Chris
dc.contributor.authorMielants, Mieke
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-01T08:48:39Z
dc.date.available2021-10-01T08:48:39Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2910
dc.sourceIIOimport
dc.titleTime dependence of quantum well recombination luminescence in a bipolar AlAs/GaAs resonant tunnelling structure
dc.typeJournal article
dc.contributor.imecauthorVan Hoof, Chris
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage363
dc.source.endpage369
dc.source.journalMicroelectronic Engineering
dc.source.volume43-44
imec.availabilityPublished - open access
imec.internalnotesLDSD'97. Proceedings 2nd Int. Conf. Low Dimensional Structures and Devices. Held in Lisbon, Protugal; 19-21 May 1997


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