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dc.contributor.authorRakshit, T.
dc.contributor.authorObradovic, B.
dc.contributor.authorWang, W.-E.
dc.contributor.authorKim, Weon Hong
dc.contributor.authorShin, Keo Myoung
dc.contributor.authorBaek, Seongcheol
dc.contributor.authorLee, Sung Woo
dc.contributor.authorKim, S.-H.
dc.contributor.authorLee, J.-M.
dc.contributor.authorKim, Daeyong
dc.contributor.authorHoover, A.
dc.contributor.authorSong, W.-B.
dc.contributor.authorCantoro, M.
dc.contributor.authorHeo, Y.-C.
dc.contributor.authorRooyackers, Rita
dc.contributor.authorArdila, S.C.
dc.contributor.authorVais, Abhitosh
dc.contributor.authorLin, Dennis
dc.contributor.authorCollaert, Nadine
dc.contributor.authorRodder, M.S.
dc.date.accessioned2021-10-24T11:45:04Z
dc.date.available2021-10-24T11:45:04Z
dc.date.issued2017
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29254
dc.sourceIIOimport
dc.titleA new direction for III-V FETs for mobile CPU operation uncluding burst-mode: In0.35Ga0.65As channel
dc.typeJournal article
dc.contributor.imecauthorVais, Abhitosh
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecVais, Abhitosh::0000-0002-0317-7720
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage314
dc.source.endpage317
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue3
dc.source.volume38
dc.identifier.urlhttps://ieeexplore.ieee.org/document/7833046/
imec.availabilityPublished - open access


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