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Fabrication, characterization and analysis of Ge/GeSn heterojunction p-type tunnel transistors

dc.contributor.authorSchulte-Braucks, Christian
dc.contributor.authorPandey, Rahul
dc.contributor.authorSajjad, Redwan Noor
dc.contributor.authorBarth, Mike
dc.contributor.authorGhosh, Ram Krishna
dc.contributor.authorGrisafe, Ben
dc.contributor.authorSharma, Pankaj
dc.contributor.authorvon den Driesch, Nils
dc.contributor.authorVohra, Anurag
dc.contributor.authorRayner, Gilbert Bruce
dc.contributor.authorLoo, Roger
dc.contributor.authorMantl, Siegfried
dc.contributor.authorBuca, Dan
dc.contributor.authorYeh, C-C.
dc.contributor.authorWu, Cheng-Hsien
dc.contributor.authorTsai, Wilman
dc.contributor.authorAntoniadis, Dimitri
dc.contributor.authorDatta, Suman
dc.date.accessioned2021-10-24T13:08:59Z
dc.date.available2021-10-24T13:08:59Z
dc.date.issued2017-09
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29398
dc.sourceIIOimport
dc.titleFabrication, characterization and analysis of Ge/GeSn heterojunction p-type tunnel transistors
dc.typeJournal article
dc.contributor.imecauthorVohra, Anurag
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorWu, Cheng-Hsien
dc.contributor.orcidimecVohra, Anurag::0000-0002-2831-0719
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage4354
dc.source.endpage4362
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue10
dc.source.volume64
dc.identifier.urlhttp://ieeexplore.ieee.org/document/8024179/
imec.availabilityPublished - imec


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