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Tomographic mapping analysis in the depth direction of high-Ge-content SiGe layers with compositionally graded buffers by nanobeam X-ray diffraction

dc.contributor.authorShida, Kazuki
dc.contributor.authorTakeuchi, Shotaro
dc.contributor.authorImai, Yasuhiko
dc.contributor.authorKimura, Shigeru
dc.contributor.authorSchulze, Andreas
dc.contributor.authorCaymax, Matty
dc.contributor.authorSakai, Akira
dc.date.accessioned2021-10-24T13:28:07Z
dc.date.available2021-10-24T13:28:07Z
dc.date.issued2017
dc.identifier.issn1944-8244
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29429
dc.sourceIIOimport
dc.titleTomographic mapping analysis in the depth direction of high-Ge-content SiGe layers with compositionally graded buffers by nanobeam X-ray diffraction
dc.typeJournal article
dc.contributor.imecauthorCaymax, Matty
dc.source.peerreviewyes
dc.source.beginpage13726
dc.source.endpage13732
dc.source.journalACS Applied Materials & Interfaces
dc.source.issue15
dc.source.volume9
dc.identifier.urlhttp://pubs.acs.org/doi/abs/10.1021/acsami.7b01309
imec.availabilityPublished - imec


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