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FETs on 2-D materials: deconvolution of the channel and contact characteristics by four-terminal resistance measurements on WSe2 transistors

dc.contributor.authorSutar, Surajit
dc.contributor.authorAsselberghs, Inge
dc.contributor.authorLin, Dennis
dc.contributor.authorThean, Aaron
dc.contributor.authorRadu, Iuliana
dc.date.accessioned2021-10-24T14:31:09Z
dc.date.available2021-10-24T14:31:09Z
dc.date.issued2017
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29530
dc.sourceIIOimport
dc.titleFETs on 2-D materials: deconvolution of the channel and contact characteristics by four-terminal resistance measurements on WSe2 transistors
dc.typeJournal article
dc.contributor.imecauthorSutar, Surajit
dc.contributor.imecauthorAsselberghs, Inge
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage2970
dc.source.endpage2978
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue7
dc.source.volume64
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7924339/
imec.availabilityPublished - open access


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