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Improving low-temperature APCVD SiO2 passivation by rapid themal annealing for Si devices

dc.contributor.authorSivoththaman, Sivanarayanamoorthy
dc.contributor.authorDe Schepper, Patrick
dc.contributor.authorLaureys, Wim
dc.contributor.authorNijs, Johan
dc.contributor.authorMertens, Robert
dc.date.accessioned2021-10-01T08:57:21Z
dc.date.available2021-10-01T08:57:21Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2955
dc.sourceIIOimport
dc.titleImproving low-temperature APCVD SiO2 passivation by rapid themal annealing for Si devices
dc.typeJournal article
dc.contributor.imecauthorMertens, Robert
dc.source.peerreviewno
dc.source.beginpage505
dc.source.endpage507
dc.source.journalIEEE Electron Device Letters
dc.source.issue12
dc.source.volume19
imec.availabilityPublished - imec


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