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On the distribution of oxide defect levels in Al2O3 and HfO2 high-k dielectrics deposited on InGaAs Metal-Oxide-Semiconductor devices studied by Capacitance-Voltage hysteresis

dc.contributor.authorVais, Abhitosh
dc.contributor.authorFranco, Jacopo
dc.contributor.authorLin, Dennis
dc.contributor.authorPutcha, Vamsi
dc.contributor.authorSioncke, Sonja
dc.contributor.authorMocuta, Anda
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-24T15:25:13Z
dc.date.available2021-10-24T15:25:13Z
dc.date.issued2017
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29615
dc.sourceIIOimport
dc.titleOn the distribution of oxide defect levels in Al2O3 and HfO2 high-k dielectrics deposited on InGaAs Metal-Oxide-Semiconductor devices studied by Capacitance-Voltage hysteresis
dc.typeJournal article
dc.contributor.imecauthorVais, Abhitosh
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorPutcha, Vamsi
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecVais, Abhitosh::0000-0002-0317-7720
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecPutcha, Vamsi::0000-0003-1907-5486
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage144504
dc.source.journalJournal of Applied Physics
dc.source.issue14
dc.source.volume121
dc.identifier.urlhttp://aip.scitation.org/doi/full/10.1063/1.4980170
imec.availabilityPublished - open access


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