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Superior NBTI in high-k SiGe transistors - Part II: theory

dc.contributor.authorWaltl, Michael
dc.contributor.authorRzepa, Gerhard
dc.contributor.authorGrill, A.
dc.contributor.authorGoes, Wolfgang
dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorMitard, Jerome
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorGrasser, Tibor
dc.date.accessioned2021-10-24T18:26:51Z
dc.date.available2021-10-24T18:26:51Z
dc.date.issued2017
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29892
dc.sourceIIOimport
dc.titleSuperior NBTI in high-k SiGe transistors - Part II: theory
dc.typeJournal article
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage2099
dc.source.endpage2105
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue5
dc.source.volume64
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7891510/
imec.availabilityPublished - open access


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