dc.contributor.author | Wu, Tian-Li | |
dc.contributor.author | Bakeroot, Benoit | |
dc.contributor.author | Liang, Hu | |
dc.contributor.author | Posthuma, Niels | |
dc.contributor.author | You, Shuzhen | |
dc.contributor.author | Ronchi, Nicolo | |
dc.contributor.author | Stoffels, Steve | |
dc.contributor.author | Marcon, Denis | |
dc.contributor.author | Decoutere, Stefaan | |
dc.date.accessioned | 2021-10-24T19:11:05Z | |
dc.date.available | 2021-10-24T19:11:05Z | |
dc.date.issued | 2017 | |
dc.identifier.issn | 0741-3106 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/29953 | |
dc.source | IIOimport | |
dc.title | Analysis of the gate capacitance-voltage characteristics in p-GaN/AlGaN/GaN heterostructures | |
dc.type | Journal article | |
dc.contributor.imecauthor | Bakeroot, Benoit | |
dc.contributor.imecauthor | Liang, Hu | |
dc.contributor.imecauthor | Posthuma, Niels | |
dc.contributor.imecauthor | You, Shuzhen | |
dc.contributor.imecauthor | Ronchi, Nicolo | |
dc.contributor.imecauthor | Stoffels, Steve | |
dc.contributor.imecauthor | Marcon, Denis | |
dc.contributor.imecauthor | Decoutere, Stefaan | |
dc.contributor.orcidimec | Bakeroot, Benoit::0000-0003-4392-1777 | |
dc.contributor.orcidimec | Posthuma, Niels::0000-0002-6029-1909 | |
dc.contributor.orcidimec | Ronchi, Nicolo::0000-0002-7961-4077 | |
dc.contributor.orcidimec | Decoutere, Stefaan::0000-0001-6632-6239 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 1696 | |
dc.source.endpage | 1699 | |
dc.source.journal | IEEE Electron Device Letters | |
dc.source.issue | 12 | |
dc.source.volume | 38 | |
dc.identifier.url | http://ieeexplore.ieee.org/document/8089745/ | |
imec.availability | Published - open access | |