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Photoluminescence of phosphorus atomic layer doped Ge grown on Si

dc.contributor.authorYamamoto, Yuji
dc.contributor.authorNien, Li-Wei
dc.contributor.authorCapellini, Giovanni
dc.contributor.authorVirgilio, Michele
dc.contributor.authorCostina, Ioan
dc.contributor.authorSchubert, Markus Andreas
dc.contributor.authorSeifert, Wilfried
dc.contributor.authorSrinivasan, Ashwyn
dc.contributor.authorLoo, Roger
dc.contributor.authorScappucci, Giordano
dc.contributor.authorSabbagh, Diego
dc.contributor.authorHesse, Anne
dc.contributor.authorMurota, Junichi
dc.contributor.authorSchroeder, Thomas
dc.contributor.authorTillack, Bernd
dc.date.accessioned2021-10-24T19:33:21Z
dc.date.available2021-10-24T19:33:21Z
dc.date.issued2017
dc.identifier.issn0268-1242
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29984
dc.sourceIIOimport
dc.titlePhotoluminescence of phosphorus atomic layer doped Ge grown on Si
dc.typeJournal article
dc.contributor.imecauthorSrinivasan, Ashwyn
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage104005
dc.source.journalSemiconductor Science and Technology
dc.source.issue10
dc.source.volume32
dc.identifier.urlhttp://iopscience.iop.org/article/10.1088/1361-6641/aa8499
imec.availabilityPublished - open access


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