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High mobility In0.53Ga0.47As MOSFETs with steep sub-threshold slope achieved by remote reduction of native III-V oxides with metal electrodes

dc.contributor.authorYoshida, Shinichi
dc.contributor.authorLin, Dennis
dc.contributor.authorVais, Abhitosh
dc.contributor.authorAlian, AliReza
dc.contributor.authorFranco, Jacopo
dc.contributor.authorEl Kazzi, Salim
dc.contributor.authorMols, Yves
dc.contributor.authorMiyanami, Yuki
dc.contributor.authorNakazawa, M.
dc.contributor.authorCollaert, Nadine
dc.contributor.authorWatanabe, H.
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-24T19:39:50Z
dc.date.available2021-10-24T19:39:50Z
dc.date.issued2017
dc.identifier.issn2168-6734
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29993
dc.sourceIIOimport
dc.titleHigh mobility In0.53Ga0.47As MOSFETs with steep sub-threshold slope achieved by remote reduction of native III-V oxides with metal electrodes
dc.typeJournal article
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorVais, Abhitosh
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorMols, Yves
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecVais, Abhitosh::0000-0002-0317-7720
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage480
dc.source.endpage484
dc.source.journalIEEE Journal of the Electron Devices Society
dc.source.issue6
dc.source.volume5
dc.identifier.urlhttp://ieeexplore.ieee.org/document/8013022/
imec.availabilityPublished - open access


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