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TiSi(Ge) contacts formed at low temperature achieving around 2x10-9 $Xcm2 contact resistivities to p-SiGe

dc.contributor.authorYu, Hao
dc.contributor.authorSchaekers, Marc
dc.contributor.authorZhang, Jian
dc.contributor.authorWang, Linlin
dc.contributor.authorEveraert, Jean-Luc
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorJiang, Yu-Long
dc.contributor.authorMocuta, Dan
dc.contributor.authorCollaert, Nadine
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-24T19:42:00Z
dc.date.available2021-10-24T19:42:00Z
dc.date.issued2017
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29996
dc.sourceIIOimport
dc.titleTiSi(Ge) contacts formed at low temperature achieving around 2x10-9 $Xcm2 contact resistivities to p-SiGe
dc.typeJournal article
dc.contributor.imecauthorYu, Hao
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorZhang, Jian
dc.contributor.imecauthorEveraert, Jean-Luc
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecYu, Hao::0000-0002-1976-0259
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage500
dc.source.endpage506
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue2
dc.source.volume64
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7807312/
imec.availabilityPublished - open access


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