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Low temperature anneal of electron irradiation induced defects in p-type silicon

dc.contributor.authorTrauwaert, Marie-Astrid
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorMaes, Herman
dc.contributor.authorVan Bavel, Mieke
dc.contributor.authorLangouche, G.
dc.contributor.authorClauws, P.
dc.date.accessioned2021-10-01T09:06:51Z
dc.date.available2021-10-01T09:06:51Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2999
dc.sourceIIOimport
dc.titleLow temperature anneal of electron irradiation induced defects in p-type silicon
dc.typeJournal article
dc.contributor.imecauthorVan Bavel, Mieke
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1295
dc.source.endpage1298
dc.source.journalMaterials Science and Technology
dc.source.issue12
dc.source.volume14
imec.availabilityPublished - open access
imec.internalnotes1st International Conference on Materials for Microelectronics; Barcelona, Spain; October 1994


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