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Hot-carrier degradation behavior of N- and P-channel MOSFETs under dynamic operation conditions

dc.contributor.authorBellens, Rudi
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHeremans, Paul
dc.contributor.authorMaes, Herman
dc.date.accessioned2021-09-29T12:39:45Z
dc.date.available2021-09-29T12:39:45Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29
dc.sourceIIOimport
dc.titleHot-carrier degradation behavior of N- and P-channel MOSFETs under dynamic operation conditions
dc.typeJournal article
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorHeremans, Paul
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1421
dc.source.endpage1428
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue8
dc.source.volume41
imec.availabilityPublished - open access


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