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dc.contributor.authorBalaji, Yashwanth
dc.contributor.authorSmets, Quentin
dc.contributor.authorLockhart de la Rosa, Cesar Javier
dc.contributor.authorLu, Augustin
dc.contributor.authorChiappe, Daniele
dc.contributor.authorAgarwal Kumar, Tarun
dc.contributor.authorLin, Dennis
dc.contributor.authorHuyghebaert, Cedric
dc.contributor.authorRadu, Iuliana
dc.contributor.authorMocuta, Dan
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-25T16:38:15Z
dc.date.available2021-10-25T16:38:15Z
dc.date.issued2018
dc.identifier.issn2168-6734
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30192
dc.sourceIIOimport
dc.titleTunneling transistors based on MoS2/MoTe2 van der Waals heterostructures
dc.typeJournal article
dc.contributor.imecauthorBalaji, Yashwanth
dc.contributor.imecauthorSmets, Quentin
dc.contributor.imecauthorLockhart de la Rosa, Cesar Javier
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorHuyghebaert, Cedric
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecSmets, Quentin::0000-0002-2356-5915
dc.contributor.orcidimecHuyghebaert, Cedric::0000-0001-6043-7130
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1048
dc.source.endpage1055
dc.source.journalIEEE Journal of the Electron Devices Society
dc.source.volume6
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8315402/
imec.availabilityPublished - open access


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