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dc.contributor.authorCelano, Umberto
dc.contributor.authorPopovici, Mihaela Ioana
dc.contributor.authorFlorent, Karine
dc.contributor.authorLavizzari, Simone
dc.contributor.authorFavia, Paola
dc.contributor.authorPaulussen, Kris
dc.contributor.authorBender, Hugo
dc.contributor.authorDi Piazza, Luca
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-25T17:06:27Z
dc.date.available2021-10-25T17:06:27Z
dc.date.issued2018
dc.identifier.issn2040-3364
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30377
dc.sourceIIOimport
dc.titleThe flexoelectric effect in Al-doped hafnium oxide
dc.typeJournal article
dc.contributor.imecauthorCelano, Umberto
dc.contributor.imecauthorPopovici, Mihaela Ioana
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorPaulussen, Kris
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorDi Piazza, Luca
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecCelano, Umberto::0000-0002-2856-3847
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecPaulussen, Kris::0000-0002-8945-2438
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewyes
dc.source.beginpage8471
dc.source.endpage8476
dc.source.journalNanoscale
dc.source.issue18
dc.source.volume10
dc.identifier.urlhttp://pubs.rsc.org/en/Content/ArticleLanding/2018/NR/C8NR00618K#!divAbstract
imec.availabilityPublished - imec


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