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Defects in amorphous semicondutors: the case of amorphous-Indium-Gallium-Zinc-Oxide

dc.contributor.authorde Jamblinne de Meux, Albert
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorGenoe, Jan
dc.contributor.authorHeremans, Paul
dc.date.accessioned2021-10-25T17:42:50Z
dc.date.available2021-10-25T17:42:50Z
dc.date.issued2018
dc.identifier.issn2331-7019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30527
dc.sourceIIOimport
dc.titleDefects in amorphous semicondutors: the case of amorphous-Indium-Gallium-Zinc-Oxide
dc.typeJournal article
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorHeremans, Paul
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.contributor.orcidimecHeremans, Paul::0000-0003-2151-1718
dc.source.peerreviewyes
dc.source.beginpage54039
dc.source.journalPhysical Review Applied
dc.source.issue5
dc.source.volume9
dc.identifier.urlhttps://link.aps.org/doi/10.1103/PhysRevApplied.9.054039
imec.availabilityPublished - imec


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