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Material developments and domain wall based nanosecond-scale switching process in perpendicularly magnetized STT-MRAM cells

dc.contributor.authorDevolder, Thibaut
dc.contributor.authorKim, Joo-Von
dc.contributor.authorSwerts, Johan
dc.contributor.authorCouet, Sebastien
dc.contributor.authorRao, Siddharth
dc.contributor.authorKim, Woojin
dc.contributor.authorMertens, Sofie
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorNikitin, Vladimir
dc.date.accessioned2021-10-25T18:08:57Z
dc.date.available2021-10-25T18:08:57Z
dc.date.issued2018
dc.identifier.issn0018-9464
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30616
dc.sourceIIOimport
dc.titleMaterial developments and domain wall based nanosecond-scale switching process in perpendicularly magnetized STT-MRAM cells
dc.typeJournal article
dc.contributor.imecauthorSwerts, Johan
dc.contributor.imecauthorCouet, Sebastien
dc.contributor.imecauthorRao, Siddharth
dc.contributor.imecauthorKim, Woojin
dc.contributor.imecauthorMertens, Sofie
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.orcidimecCouet, Sebastien::0000-0001-6436-9593
dc.contributor.orcidimecRao, Siddharth::0000-0001-6161-3052
dc.contributor.orcidimecMertens, Sofie::0000-0002-1482-6730
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage3400109
dc.source.journalIEEE Transactions on Magnetics
dc.source.issue2
dc.source.volume54
dc.identifier.urlhttp://ieeexplore.ieee.org/document/8017454/
imec.availabilityPublished - open access


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