Show simple item record

Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode

dc.contributor.authorEl Kazzi, Salim
dc.contributor.authorAlian, AliReza
dc.contributor.authorHsu, Brent
dc.contributor.authorVerhulst, Anne
dc.contributor.authorWalke, Amey
dc.contributor.authorFavia, Paola
dc.contributor.authorDouhard, Bastien
dc.contributor.authordel Alamo, Jesus Del Alamo
dc.contributor.authorLu, Wenjie
dc.contributor.authorCollaert, Nadine
dc.contributor.authorMerckling, Clement
dc.date.accessioned2021-10-25T18:24:34Z
dc.date.available2021-10-25T18:24:34Z
dc.date.issued2018
dc.identifier.issn0022-0248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30665
dc.sourceIIOimport
dc.titleCareful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode
dc.typeJournal article
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorHsu, Brent
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorWalke, Amey
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorMerckling, Clement
dc.contributor.orcidimecHsu, Brent::0000-0003-0823-6088
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.source.peerreviewyes
dc.source.beginpage86
dc.source.endpage91
dc.source.journalJournal of Crystal Growth
dc.source.volume484
dc.identifier.urlhttps://www.sciencedirect.com/science/article/pii/S0022024817307431
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record