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Pulsed photo-ionization spectroscopy in carbon doped MOCVD GaN epi-layers on Si

dc.contributor.authorGaubas, Eugenijus
dc.contributor.authorCeponis, Tomas
dc.contributor.authorMickevicius, Janus
dc.contributor.authorPavlov, Jonas
dc.contributor.authorRumbauskas, Valery
dc.contributor.authorVelicka, Marius
dc.contributor.authorSimoen, Eddy
dc.contributor.authorZhao, Ming
dc.date.accessioned2021-10-25T18:55:24Z
dc.date.available2021-10-25T18:55:24Z
dc.date.issued2018
dc.identifier.issn0268-1242
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30751
dc.sourceIIOimport
dc.titlePulsed photo-ionization spectroscopy in carbon doped MOCVD GaN epi-layers on Si
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorZhao, Ming
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.source.peerreviewyes
dc.source.beginpage75015
dc.source.journalSemiconductor Science and Technology
dc.source.issue7
dc.source.volume33
dc.identifier.urlhttp://iopscience.iop.org/article/10.1088/1361-6641/aaca78
imec.availabilityPublished - imec


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