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Effect of high oxygen partial pressure on carrier transport mechanism in a-InGaZnO TFTs

dc.contributor.authorHung, Mai Phi
dc.contributor.authorChare, Christopher
dc.contributor.authorNag, Manoj
dc.contributor.authorde Jamblinne de Meux, Albert
dc.contributor.authorGenoe, Jan
dc.contributor.authorSteudel, Soeren
dc.date.accessioned2021-10-25T20:02:38Z
dc.date.available2021-10-25T20:02:38Z
dc.date.issued2018
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30921
dc.sourceIIOimport
dc.titleEffect of high oxygen partial pressure on carrier transport mechanism in a-InGaZnO TFTs
dc.typeJournal article
dc.contributor.imecauthorChare, Christopher
dc.contributor.imecauthorNag, Manoj
dc.contributor.imecauthorGenoe, Jan
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.source.peerreviewyes
dc.source.beginpage2833
dc.source.endpage2837
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue7
dc.source.volume65
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8373744/
imec.availabilityPublished - imec


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