Show simple item record

Determination of the decay rate of photoionized Te atoms implanted in GaAs and Al0.3Ga0.7As

dc.contributor.authorBemelmans, Hilde
dc.contributor.authorBorghs, Gustaaf
dc.contributor.authorLangouche, G.
dc.date.accessioned2021-09-29T12:39:45Z
dc.date.available2021-09-29T12:39:45Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30
dc.sourceIIOimport
dc.titleDetermination of the decay rate of photoionized Te atoms implanted in GaAs and Al0.3Ga0.7As
dc.typeJournal article
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewno
dc.source.beginpage1105
dc.source.endpage9
dc.source.journalMaterials Science Forum
dc.source.volume143-147
imec.availabilityPublished - imec
imec.internalnotes17th Int. Conf. on Defects in Semiconductors. 18-23 July 1993; Gmunden, Austria


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record