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How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches

dc.contributor.authorKunert, Bernardette
dc.contributor.authorMols, Yves
dc.contributor.authorBaryshnikova, Marina
dc.contributor.authorWaldron, Niamh
dc.contributor.authorSchulze, Andreas
dc.contributor.authorLanger, Robert
dc.date.accessioned2021-10-25T21:22:38Z
dc.date.available2021-10-25T21:22:38Z
dc.date.issued2018
dc.identifier.issn0268-1242
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31099
dc.sourceIIOimport
dc.titleHow to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches
dc.typeJournal article
dc.contributor.imecauthorKunert, Bernardette
dc.contributor.imecauthorMols, Yves
dc.contributor.imecauthorBaryshnikova, Marina
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorLanger, Robert
dc.contributor.orcidimecKunert, Bernardette::0000-0002-8986-4109
dc.contributor.orcidimecBaryshnikova, Marina::0000-0002-5945-4459
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage93002
dc.source.journalSemiconductor Science and Technology
dc.source.issue9
dc.identifier.urlhttps://iopscience.iop.org/article/10.1088/1361-6641/aad655
imec.availabilityPublished - open access
imec.internalnotes33


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