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Synthetic ferromanget pinning layers enabling top-pinned magnetic tunnel junctions for high density embedded MRAM applications

dc.contributor.authorLiu, Enlong
dc.contributor.authorWu, Jackson
dc.contributor.authorCouet, Sebastien
dc.contributor.authorMertens, Sofie
dc.contributor.authorRao, Siddharth
dc.contributor.authorKim, Woojin
dc.contributor.authorGarello, Kevin
dc.contributor.authorCrotti, Davide
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorDe Boeck, Jo
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorSwerts, Johan
dc.date.accessioned2021-10-25T22:15:46Z
dc.date.available2021-10-25T22:15:46Z
dc.date.issued2018
dc.identifier.issn2331-7019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31206
dc.sourceIIOimport
dc.titleSynthetic ferromanget pinning layers enabling top-pinned magnetic tunnel junctions for high density embedded MRAM applications
dc.typeJournal article
dc.contributor.imecauthorWu, Jackson
dc.contributor.imecauthorCouet, Sebastien
dc.contributor.imecauthorMertens, Sofie
dc.contributor.imecauthorRao, Siddharth
dc.contributor.imecauthorKim, Woojin
dc.contributor.imecauthorGarello, Kevin
dc.contributor.imecauthorCrotti, Davide
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorDe Boeck, Jo
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.imecauthorSwerts, Johan
dc.contributor.orcidimecCouet, Sebastien::0000-0001-6436-9593
dc.contributor.orcidimecMertens, Sofie::0000-0002-1482-6730
dc.contributor.orcidimecRao, Siddharth::0000-0001-6161-3052
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.source.peerreviewyes
dc.source.beginpage54054
dc.source.journalPhysical Review Applied
dc.source.issue5
dc.source.volume10
dc.identifier.urlhttps://doi.org/10.1103/PhysRevApplied.10.054054
imec.availabilityPublished - imec


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