Show simple item record

The effect of Ga pre-deposition on Si (111) surface for InAs nanowire selective area hetero-epitaxy

dc.contributor.authorLiu, Ziyang
dc.contributor.authorMerckling, Clement
dc.contributor.authorRooyackers, Rita
dc.contributor.authorFranquet, Alexis
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorVila, Maria
dc.contributor.authorRubio-Zuazo, Juan
dc.contributor.authorCastro, German
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-25T22:21:53Z
dc.date.available2021-10-25T22:21:53Z
dc.date.issued2018
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31218
dc.sourceIIOimport
dc.titleThe effect of Ga pre-deposition on Si (111) surface for InAs nanowire selective area hetero-epitaxy
dc.typeJournal article
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorFranquet, Alexis
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecFranquet, Alexis::0000-0002-7371-8852
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.beginpage145301
dc.source.journalJournal of Applied Physics
dc.source.issue14
dc.source.volume123
dc.identifier.urlhttps://aip.scitation.org/doi/10.1063/1.4998001
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record