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dc.contributor.authorMakarov, Alexander
dc.contributor.authorTyaginov, Stanislav
dc.contributor.authorKaczer, Ben
dc.contributor.authorJech, Markus
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorGrill, Alexander
dc.contributor.authorHellings, Geert
dc.contributor.authorVexler, Mikhail
dc.contributor.authorLinten, Dimitri
dc.contributor.authorGrasser, Tibor
dc.date.accessioned2021-10-25T22:44:58Z
dc.date.available2021-10-25T22:44:58Z
dc.date.issued2018-10
dc.identifier.issn1063-7826
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31262
dc.sourceIIOimport
dc.titleAnalysis of the features of hot-carrier degradation in FinFETs
dc.typeJournal article
dc.contributor.imecauthorTyaginov, Stanislav
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorGrill, Alexander
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecGrill, Alexander::0000-0003-1615-1033
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1298
dc.source.endpage1302
dc.source.journalSemiconductors
dc.source.issue10
dc.source.volume52
dc.identifier.urlhttps://doi.org/10.1134/S1063782618100081
imec.availabilityPublished - open access


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