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Anisotropic stress in narrow sGe fin field-effect transistor channels measured using nano-focused Raman spectroscopy

dc.contributor.authorNuytten, Thomas
dc.contributor.authorBogdanowicz, Janusz
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorEneman, Geert
dc.contributor.authorHantschel, Thomas
dc.contributor.authorSchulze, Andreas
dc.contributor.authorFavia, Paola
dc.contributor.authorBender, Hugo
dc.contributor.authorDe Wolf, Ingrid
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-26T00:17:47Z
dc.date.available2021-10-26T00:17:47Z
dc.date.issued2018
dc.identifier.issn2166-532X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31434
dc.sourceIIOimport
dc.titleAnisotropic stress in narrow sGe fin field-effect transistor channels measured using nano-focused Raman spectroscopy
dc.typeJournal article
dc.contributor.imecauthorNuytten, Thomas
dc.contributor.imecauthorBogdanowicz, Janusz
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorHantschel, Thomas
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecNuytten, Thomas::0000-0002-5921-6928
dc.contributor.orcidimecBogdanowicz, Janusz::0000-0002-7503-8922
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecHantschel, Thomas::0000-0001-9476-4084
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecDe Wolf, Ingrid::0000-0003-3822-5953
dc.source.peerreviewyes
dc.source.beginpage58501
dc.source.journalAPL Materials
dc.source.issue5
dc.source.volume6
dc.identifier.urlhttp://aip.scitation.org/doi/abs/10.1063/1.4999277
imec.availabilityPublished - imec


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