dc.contributor.author | Putcha, Vamsi | |
dc.contributor.author | Franco, Jacopo | |
dc.contributor.author | Vais, Abhitosh | |
dc.contributor.author | Sioncke, Sonja | |
dc.contributor.author | Kaczer, Ben | |
dc.contributor.author | Linten, Dimitri | |
dc.contributor.author | Groeseneken, Guido | |
dc.date.accessioned | 2021-10-26T01:39:21Z | |
dc.date.available | 2021-10-26T01:39:21Z | |
dc.date.issued | 2018 | |
dc.identifier.issn | 0018-9383 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/31572 | |
dc.source | IIOimport | |
dc.title | On the apparent non-Arrhenius temperature dependence of charge-trapping in IIIV/high-k MOS stack | |
dc.type | Journal article | |
dc.contributor.imecauthor | Putcha, Vamsi | |
dc.contributor.imecauthor | Franco, Jacopo | |
dc.contributor.imecauthor | Vais, Abhitosh | |
dc.contributor.imecauthor | Kaczer, Ben | |
dc.contributor.imecauthor | Linten, Dimitri | |
dc.contributor.imecauthor | Groeseneken, Guido | |
dc.contributor.orcidimec | Putcha, Vamsi::0000-0003-1907-5486 | |
dc.contributor.orcidimec | Franco, Jacopo::0000-0002-7382-8605 | |
dc.contributor.orcidimec | Vais, Abhitosh::0000-0002-0317-7720 | |
dc.contributor.orcidimec | Kaczer, Ben::0000-0002-1484-4007 | |
dc.contributor.orcidimec | Linten, Dimitri::0000-0001-8434-1838 | |
dc.contributor.orcidimec | Groeseneken, Guido::0000-0003-3763-2098 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 3689 | |
dc.source.endpage | 3696 | |
dc.source.journal | IEEE Transactions on Electron Devices | |
dc.source.issue | 9 | |
dc.source.volume | 65 | |
dc.identifier.url | https://ieeexplore.ieee.org/document/8412232 | |
imec.availability | Published - open access | |