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TaN versus TiN metal gate input/output pMOSFETs: a low-frequency noise perspective

dc.contributor.authorSimoen, Eddy
dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorDentoni Litta, Eugenio
dc.contributor.authorSchram, Tom
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-26T03:56:47Z
dc.date.available2021-10-26T03:56:47Z
dc.date.issued2018
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31787
dc.sourceIIOimport
dc.titleTaN versus TiN metal gate input/output pMOSFETs: a low-frequency noise perspective
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorO'Sullivan, Barry
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorDentoni Litta, Eugenio
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecO'Sullivan, Barry::0000-0002-9036-8241
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage3676
dc.source.endpage3681
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue9
dc.source.volume65
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8430549
imec.availabilityPublished - open access


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