dc.contributor.author | Simoen, Eddy | |
dc.contributor.author | O'Sullivan, Barry | |
dc.contributor.author | Ritzenthaler, Romain | |
dc.contributor.author | Dentoni Litta, Eugenio | |
dc.contributor.author | Schram, Tom | |
dc.contributor.author | Horiguchi, Naoto | |
dc.contributor.author | Claeys, Cor | |
dc.date.accessioned | 2021-10-26T03:56:47Z | |
dc.date.available | 2021-10-26T03:56:47Z | |
dc.date.issued | 2018 | |
dc.identifier.issn | 0018-9383 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/31787 | |
dc.source | IIOimport | |
dc.title | TaN versus TiN metal gate input/output pMOSFETs: a low-frequency noise perspective | |
dc.type | Journal article | |
dc.contributor.imecauthor | Simoen, Eddy | |
dc.contributor.imecauthor | O'Sullivan, Barry | |
dc.contributor.imecauthor | Ritzenthaler, Romain | |
dc.contributor.imecauthor | Dentoni Litta, Eugenio | |
dc.contributor.imecauthor | Schram, Tom | |
dc.contributor.imecauthor | Horiguchi, Naoto | |
dc.contributor.orcidimec | Simoen, Eddy::0000-0002-5218-4046 | |
dc.contributor.orcidimec | O'Sullivan, Barry::0000-0002-9036-8241 | |
dc.contributor.orcidimec | Ritzenthaler, Romain::0000-0002-8615-3272 | |
dc.contributor.orcidimec | Schram, Tom::0000-0003-1533-7055 | |
dc.contributor.orcidimec | Horiguchi, Naoto::0000-0001-5490-0416 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 3676 | |
dc.source.endpage | 3681 | |
dc.source.journal | IEEE Transactions on Electron Devices | |
dc.source.issue | 9 | |
dc.source.volume | 65 | |
dc.identifier.url | https://ieeexplore.ieee.org/document/8430549 | |
imec.availability | Published - open access | |