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Junctionless versus inversion mode gate-all-around nanowire transistors from a low-frequency noise perspective

dc.contributor.authorSimoen, Eddy
dc.contributor.authorVeloso, Anabela
dc.contributor.authorMatagne, Philippe
dc.contributor.authorCollaert, Nadine
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-26T03:58:43Z
dc.date.available2021-10-26T03:58:43Z
dc.date.issued2018
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31790
dc.sourceIIOimport
dc.titleJunctionless versus inversion mode gate-all-around nanowire transistors from a low-frequency noise perspective
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorMatagne, Philippe
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1487
dc.source.endpage1492
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue4
dc.source.volume65
dc.identifier.urlhttp://ieeexplore.ieee.org/document/8291052/
imec.availabilityPublished - open access


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