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New technique for forming continuous, smooth and uniform ultrathin (3nm) PtSi layers

dc.contributor.authorAlves Donaton, Ricardo
dc.contributor.authorJin, S.
dc.contributor.authorBender, Hugo
dc.contributor.authorConard, Thierry
dc.contributor.authorDe Wolf, Ingrid
dc.contributor.authorMaex, Karen
dc.contributor.authorVantomme, Andre
dc.contributor.authorLangouche, G.
dc.date.accessioned2021-10-06T10:40:53Z
dc.date.available2021-10-06T10:40:53Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3181
dc.sourceIIOimport
dc.titleNew technique for forming continuous, smooth and uniform ultrathin (3nm) PtSi layers
dc.typeJournal article
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.imecauthorMaex, Karen
dc.contributor.imecauthorVantomme, Andre
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage195
dc.source.endpage197
dc.source.journalElectrochemical and Solid State Letters
dc.source.issue4
dc.source.volume2
imec.availabilityPublished - open access


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