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Carrier scattering induced linewidth broadening in in-situ P-doped Ge layers on Si

dc.contributor.authorSrinivasan, Ashwyn
dc.contributor.authorPorret, Clément
dc.contributor.authorPantouvaki, Marianna
dc.contributor.authorShimura, Yosuke
dc.contributor.authorGeiregat, Pieter
dc.contributor.authorLoo, Roger
dc.contributor.authorVan Campenhout, Joris
dc.contributor.authorVan Thourhout, Dries
dc.date.accessioned2021-10-26T04:32:27Z
dc.date.available2021-10-26T04:32:27Z
dc.date.issued2018
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31842
dc.sourceIIOimport
dc.titleCarrier scattering induced linewidth broadening in in-situ P-doped Ge layers on Si
dc.typeJournal article
dc.contributor.imecauthorSrinivasan, Ashwyn
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorPantouvaki, Marianna
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVan Campenhout, Joris
dc.contributor.imecauthorVan Thourhout, Dries
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecVan Campenhout, Joris::0000-0003-0778-2669
dc.contributor.orcidimecVan Thourhout, Dries::0000-0003-0111-431X
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage161101
dc.source.journalApplied Physics Letters
dc.source.issue16
dc.source.volume113
dc.identifier.urlhttps://aip.scitation.org/doi/10.1063/1.5040153
imec.availabilityPublished - open access


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