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Physical principles of self-consistent simulation of the generation of interface states and the transport of hot charge carriers in field-effect transistors based on metal–oxide–semiconductor structures

dc.contributor.authorTyaginov, Stanislav
dc.contributor.authorMakarov, Alexander
dc.contributor.authorJech, Markus
dc.contributor.authorVexler, Mikhail
dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorGrasser, Tibor
dc.date.accessioned2021-10-26T06:06:41Z
dc.date.available2021-10-26T06:06:41Z
dc.date.issued2018-02
dc.identifier.issn1063-7826
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31986
dc.sourceIIOimport
dc.titlePhysical principles of self-consistent simulation of the generation of interface states and the transport of hot charge carriers in field-effect transistors based on metal–oxide–semiconductor structures
dc.typeJournal article
dc.contributor.imecauthorTyaginov, Stanislav
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.source.peerreviewyes
dc.source.beginpage242
dc.source.endpage247
dc.source.journalSemiconductors
dc.source.issue2
dc.source.volume52
dc.identifier.urlhttps://doi.org/10.1134/S1063782618020203
imec.availabilityPublished - imec


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