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A novel broadband electro-absorption modulator based on bandfilling in n-InGaAs: design and simulations

dc.contributor.authorvan Engelen, Jorn P.
dc.contributor.authorShen, Longfei
dc.contributor.authorRoelkens, Gunther
dc.contributor.authorJiao, Yuqing
dc.contributor.authorSmit, Meint K.
dc.contributor.authorVan der Tol, Jos
dc.date.accessioned2021-10-26T06:51:07Z
dc.date.available2021-10-26T06:51:07Z
dc.date.issued2018-01
dc.identifier.issn1077-260X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32051
dc.sourceIIOimport
dc.titleA novel broadband electro-absorption modulator based on bandfilling in n-InGaAs: design and simulations
dc.typeJournal article
dc.contributor.imecauthorRoelkens, Gunther
dc.contributor.orcidimecRoelkens, Gunther::0000-0002-4667-5092
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage3300108
dc.source.journalIEEE Journal of Selected Topics in Quantum Electronics
dc.source.issue1
dc.source.volume24
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8078237/
imec.availabilityPublished - open access


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