dc.contributor.author | Van Houdt, Jan | |
dc.contributor.author | Roussel, Philippe | |
dc.date.accessioned | 2021-10-26T07:00:08Z | |
dc.date.available | 2021-10-26T07:00:08Z | |
dc.date.issued | 2018 | |
dc.identifier.issn | 0741-3106 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/32064 | |
dc.source | IIOimport | |
dc.title | Physical model for the steep subthreshold slope in ferroelectric FETs | |
dc.type | Journal article | |
dc.contributor.imecauthor | Van Houdt, Jan | |
dc.contributor.imecauthor | Roussel, Philippe | |
dc.contributor.orcidimec | Van Houdt, Jan::0000-0003-1381-6925 | |
dc.contributor.orcidimec | Roussel, Philippe::0000-0002-0402-8225 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 877 | |
dc.source.endpage | 880 | |
dc.source.journal | IEEE Electron Device Letters | |
dc.source.issue | 6 | |
dc.source.volume | 39 | |
dc.identifier.url | https://ieeexplore.ieee.org/document/8345245/ | |
imec.availability | Published - open access | |