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3D sequential stacked planar devices featuring low-temperature replacement metal gate junctionless top devices with improved reliability

dc.contributor.authorVandooren, Anne
dc.contributor.authorFranco, Jacopo
dc.contributor.authorParvais, Bertrand
dc.contributor.authorWu, Zhicheng
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorWalke, Amey
dc.contributor.authorLi, Waikin
dc.contributor.authorPeng, Lan
dc.contributor.authorDeshpande, Veeresh Vidyadhar
dc.contributor.authorBufler, Fabian
dc.contributor.authorRassoul, Nouredine
dc.contributor.authorHellings, Geert
dc.contributor.authorJamieson, Geraldine
dc.contributor.authorInoue, Fumihiro
dc.contributor.authorVerbinnen, Greet
dc.contributor.authorDevriendt, Katia
dc.contributor.authorTeugels, Lieve
dc.contributor.authorHeylen, Nancy
dc.contributor.authorVecchio, Emma
dc.contributor.authorTao, Zheng
dc.contributor.authorRosseel, Erik
dc.contributor.authorVanherle, Wendy
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorChan, BT
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorBesnard, Guillaume
dc.contributor.authorSchwarzenbach, Walter
dc.contributor.authorGaudin, Gweltaz
dc.contributor.authorRadu, Ionut
dc.contributor.authorNguyen, Bich-Yen
dc.contributor.authorWaldron, Niamh
dc.contributor.authorDe Heyn, Vincent
dc.contributor.authorMocuta, Dan
dc.contributor.authorCollaert, Nadine
dc.date.accessioned2021-10-26T07:50:42Z
dc.date.available2021-10-26T07:50:42Z
dc.date.issued2018-11
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32138
dc.sourceIIOimport
dc.title3D sequential stacked planar devices featuring low-temperature replacement metal gate junctionless top devices with improved reliability
dc.typeJournal article
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorWu, Zhicheng
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorWalke, Amey
dc.contributor.imecauthorLi, Waikin
dc.contributor.imecauthorPeng, Lan
dc.contributor.imecauthorBufler, Fabian
dc.contributor.imecauthorRassoul, Nouredine
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorJamieson, Geraldine
dc.contributor.imecauthorInoue, Fumihiro
dc.contributor.imecauthorVerbinnen, Greet
dc.contributor.imecauthorDevriendt, Katia
dc.contributor.imecauthorTeugels, Lieve
dc.contributor.imecauthorHeylen, Nancy
dc.contributor.imecauthorVecchio, Emma
dc.contributor.imecauthorTao, Zheng
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorVanherle, Wendy
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorChan, BT
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorBesnard, Guillaume
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorDe Heyn, Vincent
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecPeng, Lan::0000-0003-1824-126X
dc.contributor.orcidimecBufler, Fabian::0000-0002-1558-9378
dc.contributor.orcidimecRassoul, Nouredine::0000-0001-9489-3396
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecJamieson, Geraldine::0000-0002-6750-097X
dc.contributor.orcidimecDevriendt, Katia::0000-0002-0662-7926
dc.contributor.orcidimecTeugels, Lieve::0000-0002-6613-9414
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecChan, BT::0000-0003-2890-0388
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage5165
dc.source.endpage5171
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue11
dc.source.volume65
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8487028
imec.availabilityPublished - open access


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