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The optical and structural properties of InGaN epilayers with very high indium content

dc.contributor.authorBayliss, S. C.
dc.contributor.authorDemeester, Piet
dc.contributor.authorFletcher, I.
dc.contributor.authorMartin, R. W.
dc.contributor.authorMiddleton, P. G.
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorO'Donnell, K. P.
dc.contributor.authorSapelkin, A.
dc.contributor.authorTrager-Cowan, C.
dc.contributor.authorVan der Stricht, Wim
dc.contributor.authorYoung, C.
dc.date.accessioned2021-10-06T10:41:47Z
dc.date.available2021-10-06T10:41:47Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3213
dc.sourceIIOimport
dc.titleThe optical and structural properties of InGaN epilayers with very high indium content
dc.typeJournal article
dc.contributor.imecauthorDemeester, Piet
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage292
dc.source.endpage297
dc.source.journalMaterials Science and Engineering. B
dc.source.issue1_3
dc.source.volumeB59
imec.availabilityPublished - open access
imec.internalnotesE-MRS 1998 Spring Meeting, Symposium L: Nitrides and Related Wide Band Gap Materials. 16-19 June 1998; Strasbourg, France


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