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Junctionless versus inversion-mode lateral semiconductor nanowire transistors

dc.contributor.authorVeloso, Anabela
dc.contributor.authorMatagne, Philippe
dc.contributor.authorSimoen, Eddy
dc.contributor.authorKaczer, Ben
dc.contributor.authorEneman, Geert
dc.contributor.authorMertens, Hans
dc.contributor.authorYakimets, Dmitry
dc.contributor.authorParvais, Bertrand
dc.contributor.authorMocuta, Dan
dc.date.accessioned2021-10-26T08:12:35Z
dc.date.available2021-10-26T08:12:35Z
dc.date.issued2018
dc.identifier.issn0953-8984
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32168
dc.sourceIIOimport
dc.titleJunctionless versus inversion-mode lateral semiconductor nanowire transistors
dc.typeJournal article
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorMatagne, Philippe
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorYakimets, Dmitry
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage384002
dc.source.journalJournal of Physics: Condensed Matter
dc.source.issue38
dc.source.volume30
dc.identifier.urlhttp://iopscience.iop.org/article/10.1088/1361-648X/aad7c7
imec.availabilityPublished - open access


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