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The role of nonidealities in the scaling of MoS2 FETs

dc.contributor.authorVerreck, Devin
dc.contributor.authorArutchelvan, Goutham
dc.contributor.authorLockhart de la Rosa, Cesar Javier
dc.contributor.authorLeonhardt, Alessandra
dc.contributor.authorChiappe, Daniele
dc.contributor.authorLu, Augustin
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorMatagne, Philippe
dc.contributor.authorHeyns, Marc
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorMocuta, Anda
dc.contributor.authorRadu, Iuliana
dc.date.accessioned2021-10-26T08:34:40Z
dc.date.available2021-10-26T08:34:40Z
dc.date.issued2018
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32198
dc.sourceIIOimport
dc.titleThe role of nonidealities in the scaling of MoS2 FETs
dc.typeJournal article
dc.contributor.imecauthorVerreck, Devin
dc.contributor.imecauthorArutchelvan, Goutham
dc.contributor.imecauthorLockhart de la Rosa, Cesar Javier
dc.contributor.imecauthorLeonhardt, Alessandra
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorMatagne, Philippe
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.orcidimecVerreck, Devin::0000-0002-3833-5880
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage4635
dc.source.endpage4640
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue10
dc.source.volume65
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8450639
imec.availabilityPublished - open access


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