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Built-in sheet charge as an alternative to dopant pockets in tunnel field-effect transistors

dc.contributor.authorVerreck, Devin
dc.contributor.authorVerhulst, Anne
dc.contributor.authorXiang, Yang
dc.contributor.authorYakimets, Dmitry
dc.contributor.authorEl Kazzi, Salim
dc.contributor.authorParvais, Bertrand
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorCollaert, Nadine
dc.contributor.authorMocuta, Anda
dc.date.accessioned2021-10-26T08:36:14Z
dc.date.available2021-10-26T08:36:14Z
dc.date.issued2018
dc.identifier.issn2168-6734
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32200
dc.sourceIIOimport
dc.titleBuilt-in sheet charge as an alternative to dopant pockets in tunnel field-effect transistors
dc.typeJournal article
dc.contributor.imecauthorVerreck, Devin
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorXiang, Yang
dc.contributor.imecauthorYakimets, Dmitry
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecVerreck, Devin::0000-0002-3833-5880
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecXiang, Yang::0000-0003-0091-6935
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage658
dc.source.endpage663
dc.source.journalIEEE Journal of the Electron Devices Society
dc.source.volume6
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8357842/
imec.availabilityPublished - open access


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